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| LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4 - 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 125mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias. With increased bias of 5 V EVM is ~ 4% at 23 dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The compact footprint, low profile, and excellent thermal capability of the MLPQ package makes the LX5510 an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications WWW .Microsemi .C OM IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO TJ (C) 0 to 70 Plastic MLPQ LQ 16 pin LX5510CLQ LX5510 LX5510 Note: Available in Tape & Reel. Append the letter "T" to the part number. (i.e. LX5510CLQT) Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW .Microsemi .C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Operation Ambient Temperature ...................................................-40C to +85C Storage Temperature....................................................................-60C to +150C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 VCC N/C VC1 N/C VC2 RF OUT RF OUT N/C 13 14 15 16 12 11 1 0 9 8 7 6 5 * 1 2 3 4 N/C RF IN RF IN N/C VB1 VB2 N/C THERMAL DATA * Pad is Ground LQ PACKAGE (Bottom View) N/C LQ Plastic MLPQ 16-Pin 10C/W 50C/W N/C = No connect THERMAL RESISTANCE-JUNCTION TO CASE, JC THERMAL RESISTANCE-JUNCTION TO AMBIENT, JA FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VCC RF OUT VC1 VC2 GND Description RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor, followed by a 8.2 nH blocking inductor at the supply side. Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor and 1 uF bypass capacitor. P D PACKAGE DATA The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET Unless otherwise specified, the following specifications apply over the operating ambient temperature 0C TA otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25C Parameter SECTION HEADER Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current at Pout=23dBm 2 side lobe at 23 dBm Ramp-On Time tON nd ELECTRICAL CHARACTERISTICS 70C except where WWW .Microsemi .C OM Symbol Test Conditions Min 2.4 LX5510 Typ Max 2.5 Units f Gp 64GQAM / 54Mbps Ic_total Icq Iref S21 S21 S21 S11 S22 S12 Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% Over 100MHz 0C to +70C For Icq = 65mA GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc 20 3.0 125 65 1.2 20 1 1 10 10 -40 -55 -55 180 -52 100 ns Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. E ELECTRICALS Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET 40 30 20 3.3V S PARAMETER DATA m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=20.526 dB(S(2,1))=19.355 3.3V POWER SWEEP output power 30 25 Power /dBm, Gain /dB gain current 400 350 300 Current /mA WWW .Microsemi .C OM m1 m7 20 15 10 5 0 -5 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 250 200 150 100 50 0 -25 -20 -15 -10 -5 0 5 10 Output Power / dBm -10 freq, GHz Figure 1 (VC = 3.3V, VREF = 2.85V, Icq = 65mA) Figure 2 (Vc = 3.3V, Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 3.3V EVM DATA 2.4 GHz 10 9 8 ACP_30 MHz /[dBc] -47.5 3.3V ACP DATA 2.4 GHz -45 2.45 GHz 2.5 GHZ 2.45 GHz 2.5 GHz 7 EVM_PA /[%] 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 3 - EVM Data with 54Mb/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.85V, Icq = 65mA) Figure 4 - ACP Data with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.85V, Icq = 65mA) 3.3V SPECTRUM WITH 23DBM 5V S PARAMETER m1 freq=2.400GHz dB(S(2,1))=21.036 40 30 20 DATA m7 freq=2.500GHz dB(S(2,1))=20.043 m1 m7 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 GRAPHS GRAPHS freq, GHz Figure 5 - Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 171mA) Figure 6 - S-Parameter Data (Vc = 5V, Vref = 2.85V, Icq = 80mA) Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET 5V POWER SWEEP 6 5V EVM DATA WITH 54MB/S WWW .Microsemi .C OM 2.4 GHz 2.45 GHz 2.5 GHz 5 4 EVM_PA /[%] 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 7 - Power Sweep (Vc = 5V, Vref = 2.85V, Icq = 80mA, frequency=2.45 GHz, P1dB=29 dBm) Figure 8 - EVM Data with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.85V, Icq =80mA,) 5V ACP DATA WITH 54MB/S 2.4 GHz -45 2.45 GHz 2.5 GHZ 5V SPECTRUM WITH 25DMB -47.5 ACP_30 MHz /[dBc] -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 9 - ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.85V, Icq = 80mA) Figure 10 - Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA, Ic = 214mA, Frequency = 2.45GHz) G GRAPHS Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET PACKAGE DIMENSIONS WWW .Microsemi .C OM LQ 16-Pin MLPQ 3x3 (67x67 mil DAP) D b E D2 E2 e A1 A3 A K L Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5510 TM (R) InGaP HBT 2.4 - 2.5 GHz Power Amplifier DATA SHEET NOTES WWW .Microsemi .C OM N NOTES PRODUCT PRELIMINARY DATA - Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2000 Rev. 0.5, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 |
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